Datasheet MMBT4401 (Diodes) - 4

MMBT4401 Electrical Characteristics
(@TA = +25°C unless otherwise specified)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60  V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage(Note 10) BVCEO 40  V IC = 10.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0  V IE = 100μA, IC = 0 Collector Cutoff Current ICEX  100 nA VCE = 35V, VEB(OFF) = 0.4V Base Cutoff Current IBL  100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 10)
20  IC = 100µA, VCE = 1.0V 40  I C = 1.0mA, VCE = 1.0V DC Current Gain hFE 80   IC = 10mA, VCE = 1.0V 100 300 IC = 150mA, VCE = 1.0V 40  IC = 500mA, VCE = 2.0V 0.40 I Collector-Emitter Saturation Voltage V C = 150mA, IB = 15mA CE(sat)  V 0.75 IC = 500mA, IB = 50mA 0.75 0.95 I Base-Emitter Saturation Voltage V C = 150mA, IB = 15mA BE(sat)  V 1.2 IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb  6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb  30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 V x 10-4 CE = 10V, IC = 1.0mA, Small Signal Current Gain hfe 40 500  f = 1.0kHz Output Admittance hoe 1.0 30 μS Current Gain-Bandwidth Product fT 250  MHz VCE = 10V, IC = 20mA, f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td  15 ns VCC = 30V, IC = 150mA, Rise Time tr  VBE(o 20 ns ff) = 2.0V, IB1 = 15mA Storage Time ts  225 ns VCC = 30V, IC = 150mA, Fall Time tf  IB1 = -I 30 ns B2 = 15mA Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBT4401 4 of 7 November 2013 Document Number: DS30039 Rev. 17 - 2
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