Datasheet SCT3160KL (Rohm)

SCT3160KL
N-channel SiC power MOSFET
Datasheet l
Outline
VDSS 1200V TO-247N RDS(on) (Typ.) 160mW ID 17A PD 103W (1) (2) (3) l
Inner circuit
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Features
(1) Gate 1) Low on-resistance (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel l
Packaging specifications
5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type l
Application
Basic ordering unit (pcs) 30 ・Solar inverters Taping code C11 ・DC/DC converters Marking SCT3160KL ・Switch mode power supplies ・Induction heating ・Motor drives l
Absolute maximum ratings
(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 1200 V T *1 c = 25°C I 17 A D Continuous drain current T *1 c = 100°C I 12 A D Pulsed drain current I *2 42 A D,pulse Gate - Source voltage (DC) V - GSS 4 to +22 V Gate-Source Surge Voltage (t *3 - surge < 300nsec) VGSS_surge 4 to +26 V Recommended Drive Voltage V *4 0 / +18 V GS_op Junction temperature Tj 175 °C Range of storage temperature T - stg 55 to +175 °C www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12
14.Jun.2018 - Rev.005