Datasheet SCT3160KL (Rohm) - 3
| Производитель | Rohm |
| Описание | N-channel SiC power MOSFET |
| Страниц / Страница | 13 / 3 — SCT3160KL. Electrical characteristics. Gate Charge characteristics. … |
| Формат / Размер файла | PDF / 716 Кб |
| Язык документа | английский |
SCT3160KL. Electrical characteristics. Gate Charge characteristics. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
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SCT3160KL
Datasheet l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance g *5 VDS = 10V, ID = 5A - 2.5 - S fs Input capacitance Ciss VGS = 0V - 398 - Output capacitance Coss VDS = 800V - 41 - pF Reverse transfer capacitance Crss f = 1MHz - 18 - Effective output capacitance, V C GS = 0V o(er) - 45 - pF energy related VDS = 0V to 600V Turn - on delay time t *5 V d(on) DD = 400V, ID =5A - 14 - Rise time t *5 V r GS = 18V/0V - 18 - ns Turn - off delay time t *5 R - d(off) L =80W - 24 Fall time t *5 RG = 0W - 25 - f V Turn - on switching loss E *5 DD = 600V, ID=5A - 62 - on VGS = 18V/0V RG = 0W L=750mH mJ *E Turn - off switching loss E *5 on includes diode - 12 - off reverse recovery l
Gate Charge characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Q *5 V g DD = 600V - 42 - Gate - Source charge Q *5 ID = 5A - 11 - nC gs Gate - Drain charge Q *5 VGS = 18V - 18 - gd Gate plateau voltage V(plateau) VDD = 600V, ID = 5A - 9.6 - V www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/12
14.Jun.2018 - Rev.005
