MTD1N60E SAFE OPERATING AREA 10 50 VGS = 20 V I SINGLE PULSE D = 1 A 10 µs TC = 25°C 40 1 O−SOURCE (mJ) (AMPS) 30 100 µs 0.1 1 ms dc 20 10 ms , DRAIN CURRENT 0.01 AVALANCHE ENERGY I D RDS(on) LIMIT 10 THERMAL LIMIT , SINGLE PULSE DRAINN−T PACKAGE LIMIT E AS 0.001 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward BiasedFigure 12. Maximum Avalanche Energy versusSafe Operating AreaStarting Junction Temperature 1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.01 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) SINGLE PULSE t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.011.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t,TIME (s) Figure 13. Thermal Response di/dt IS trr ta tb TIME tp 0.25 IS IS Figure 14. Diode Reverse Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data
