Datasheet BD136G, BD138G, BD140G (ON Semiconductor) - 3

BD136G, BD138G, BD140G TYPICAL CHARACTERISTICS
1.2 1.2 IC/IB = 10 VCE = 2 V 1.0 TAGE (V) 1.0 −55°C −55°C 0.8 0.8 TAGE (V) 25°C −EMITTER 25°C 0.6 0.6 150°C , BASE TION VOL 150°C 0.4 −EMITTER ON VOL 0.4 sat) TURA V BE( SA 0.2 , BASE 0.2 on) 0 0 0.001 0.01 0.1 1 10 V BE( 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage
1000 10 f = 1 MHz 0.1 ms Cib 5 ms 0.5 ms 100 1 Cob TJ = 125°C dc ANCE (pF) OR CURRENT (A) ACIT 10 0.1 C, CAP , COLLECT BD136 I C BD138 BD140 1 0.01 0.1 1 10 100 1 10 80 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area
1.50 1.25 1.00 ATION (W) 0.75 0.50 , POWER DISSIP P D 0.25 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Derating www.onsemi.com 3