Philips Semiconductors Product specification J174; J175; P-channel silicon field-effect transistors J176; J177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate-drain voltage VGDO max. 30 V Gate current (DC) −IG max. 50 mA Total power dissipation up to Tamb = 50 °C Ptot max. 400 mW Storage temperature range Tstg −65 to +150 °C Junction temperature Tj max. 150 °C THERMAL RESISTANCE From junction to ambient in free air Rth j-a = 250 K/W STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified J174J175J176 J177 Gate cut-off current VGS = 20 V; VDS = 0 IGSS max. 1 1 1 1 nA Drain cut-off current −VDS = 15 V; VGS = 10 V −IDSX max. 1 1 1 1 nA Drain current min. 20 7 2 1.5 mA −VDS = 15 V; VGS = 10 V −IDSS max. 135 70 35 20 mA Gate-source breakdown voltage IG = 1 µA; VDS = 0 V(BR)GSS min. 30 30 30 30 V Gate-source cut-off voltage min. 5 3 1 0.8 V −ID = 10 nA; VDS = −15 V VGS off max. 10 6 4 2.25 V Drain-source ON-resistance −VDS = 0.1 V; VGS = 0 RDSon max. 85 125 250 300 Ω April 1995 3 Document Outline DESCRIPTION PINNING QUICK REFERENCE DATA RATINGS THERMAL RESISTANCE STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINE SOT54 DEFINITIONS
