MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)SYMBOLCHARACTERISTICMINTYP MAX UNITSCONDITIONS G V S1 G V S2 Differential Gate to Source Cutoff 20 Voltage mV VDS = 10V, ID = 1mA IDSS1 Gate to Source Saturation Current Ratio 0.9 1.0 VDS = 10V, VGS = 0V IDSS2 COMMON MODE REJECTION RATIO CMRR 95 102 dB VDS = 10V to 20V, ID = 200µA -20 log│∆VGS1-2/∆VDS│ SYMBOLCHARACTERISTICMINTYP MAX UNITSCONDITIONS V e DS = 15V, ID = 2.0mA, f = 1kHz, n Noise Voltage 1.8 2.0 nV/√Hz NBW = 1Hz V e DS = 15V, ID = 2.0mA, f = 10Hz, n Noise Voltage 2.8 3.5 nV/√Hz NBW = 1Hz CISS Common Source Input Capacitance 4 8 pF VDS = 15V, ID = 500µA, f = 1MHz Common Source Reverse Transfer CRSS 3 pF Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)SYMBOLCHARACTERISTICMINTYP MAX UNITSCONDITIONS BVGSS Gate to Source Breakdown Voltage -60 V VDS = 0, ID = -1nA V(BR)G1 - G2 Gate to Gate Breakdown Voltage ±30 ±45 V IG= ±1µA, ID=IS=0 A (Open Circuit) VGS(OFF) Gate to Source Pinch-off Voltage -1.5 -3.5 V VDS = 15V, ID = 1nA VGS Gate to Source Operating Voltage -0.5 -3.5 V VDS = 15V, ID = 500µA I 2 DSS Drain to Source Saturation Current 2.5 5 15 mA VDG = 15V, VGS = 0 -2 -25 pA VDG = 15V, ID = 200µA IG Gate Operating Current -0.8 -10 nA TA = 125°C IGSS Gate to Source Leakage Current -100 pA VDG = -15V, VDS = 0 Gfs Full Conductance Transconductance 1500 µS VDG = 15V, VGS = 0, f = 1kHz Gfs Transconductance 1000 1500 µS VDG = 15V, ID = 500µA GOS Full Output Conductance 40 µS VDG = 15V, VGS = 0 GOS Output Conductance 1.8 2.7 µS VDG = 15V, ID = 200µA V NF Noise Figure 0.5 dB DS = 15V, VGS = 0, RG = 10MΩ, f = 100Hz, NBW = 6Hz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201151 05/14/2014 Rev#A30 ECN# LSK489
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