PD - 97390 IRLB8721PbF Applications HEXFET® Power MOSFET l Optimized for UPS/Inverter Applications V l High Frequency Synchronous Buck DSSRDS(on) maxQg (typ.) Converters for Computer Processor Power 30V 8.7m : @VGS = 10V7.6nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S D l Very Low RDS(on) at 4.5V VGS G l Ultra-Low Gate Impedance TO-220AB l Fully Characterized Avalanche Voltage IRLB8721PbF and Current l Lead-Free GDS Gate Drain Source Absolute Maximum RatingsParameterMax.Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ T 62 C = 25°C Continuous Drain Current, VGS @ 10V ID @ T 44 A C = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c 250 PD @T 65 C = 25°C Maximum Power Dissipation g W PD @T 33 C = 100°C Maximum Power Dissipation g Linear Derating Factor 0.43 W/°C TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm) Thermal ResistanceParameterTyp.Max.Units RθJC Junction-to-Case g ––– 2.3 Rθ °C/W CS Case-to-Sink, Flat Greased Surface 0.5 ––– RθJA Junction-to-Ambient f ––– 62 Notes through are on page 9 www.irf.com 1 4/22/09
