IRLB8721PbF 10000 14 VGS = 0V, f = 1 MHZ ID= 25A Ciss = Cgs + Cgd, Cds SHORTED ) V C V 12 ( DS= 24V rss = Cgd e C g VDS= 15V ) oss = Cds + Cgd at F l 10 p o 1000 ( Ciss V e e c c n Coss r 8 a u ti o c S a - p o 6 t a - C Crss e t , 100 a C G 4 , SGV 2 0 10 0 4 8 12 16 20 24 28 1 10 100 Q V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A( A ( t t n 100 n 100 100μsec er e r T rr u J = 175°C u C 1msec C ni e a c r r 10msec 10 D u o 10 e S s - r T o e J = 25°C t- v n e i R a r , 1 D D 1 , T I S I D C= 25°C TJ= 175°C VGS = 0V Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com
