AIM702H50BElectrical Characteristics (TJ=25°C, unless otherwise specified) SymbolParameterConditionsMin.Typ.MaxUnitsInverter Drain-Source Leakage IDSS V Current IN=0V, VDS=500V - - 100 µA Drain-Source On-State RDS(on) V Resistance CC=VBS=15V, VIN=5V ID=0.75A - 3.2 4.0 Ω MOSFET Body Diode VSD V Forward Voltage CC=VBS=15V, VIN=0 ISD=0.75A - 0.8 1.2 V tOFF - 800 - ns tf VPN=300V, VCC=VBS=15V - 70 - ns tON Switching Times ID=0.75A, VIN=0V↔5V - 800 - ns t Inductive load (high-side) r - 80 - ns trr - 160 - ns Control (Protection) Quiescent V I CC Supply QCC V Current CC=15V, IN(UL, VL, WL)=0V VCC-COM - - 1.5 mA Quiescent V V I BS Supply B(U)-U, VB(V)-V, QBS V - - 0.3 mA Current BS=15V, IN(UH, VH, WH)=0V VB(W)-W UVCCT Trip Level 10.3 11.4 12.5 V UVCCR Supply Circuit Under- Reset Level 10.8 11.9 13.0 V UVBST Voltage Protection Trip Level 9.0 10.0 11.0 V UVBSR Reset Level 10.0 11.0 12.0 V Pull-down LVIC temperature=90°C 2.65 2.78 2.92 V VOT Temperature Output R=10kΩ (2) LVIC temperature=25°C 0.80 1.05 1.30 V OTT Over-Temperature VCC=15V, Detect Trip Level 110 130 150 °C OTHYS Protection (3) LVIC Temperature Hysteresis of Trip Reset - 30 - °C IIN Input Current VIN=5V - 650 850 µA Vth(on) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), - - 2.5 V Vth(off) OFF Threshold Voltage IN(VL), IN(WL) –COM 0.8 - - V Bootstrap Diode Maximum Repetitive VRRM 600 - - V Reverse Voltage Bootstrap Diode Forward VF(BSD) - 5.0 - V Voltage IF=10mA including voltage drop by limiting Bootstrap Diode resistor RBSD - 500 - Ω Equivalent Resistance Note: 2. The IPM does not shutdown MOSFETs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that the user defined, the controller (MCU) should stop the IPM. Temperature of LVIC vs. VOT output characteristics is described in Figure 3. 3. When the LVIC temperature exceeds OT Trip temperature level (OTT), OT protection is triggered and fault outputs. Rev.1.2 January 2020 www.aosmd.com Page 4 of 10
