Datasheet VOMA618A (Vishay) - 2

VOMA618A
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT
Reverse voltage VR 5 V Power dissipation Pdiss 30 mW Forward current IF 20 mA Surge forward current tp ≤ 10 μs IFSM 0.5 A Junction temperature Tj 125 °C
OUTPUT
Collector emitter voltage VCEO 80 V Emitter collector voltage VECO 7 V Collector current IC 50 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C
COUPLER
Total power dissipation Ptot 180 mW Storage temperature range Tstg -40 to +150 °C Ambient temperature range Tamb -40 to +110 °C Soldering temperature t = 10 s Tsld 260 °C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 25 10000 ) Coupled device W A (m (m 20 150 on 1000 rrent 1000 ine u 15 ssipati Phototransistor ne ne ne ine rd C ne Di 100 2nd l a r e 1st li 2nd li orw 1st li 2nd l w 2nd li o F 10 - 100 100 I F otal P 50 T - IR diode 5 totP 0 10 0 10 0 25 50 75 100 125 0 25 50 75 100 125 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature Rev. 1.1, 05-Jul-2019
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