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Datasheet LT8653S (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеDual Channel 2A, 42V, Synchronous Step-Down Silent Switcher 2 with 6.2μA Quiescent Current
Страниц / Страница30 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply …
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Язык документаанглийский

ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Текстовая версия документа

link to page 2 LT8653S
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
Feedback Reference Voltage 0.794 0.8 0.806 V l 0.790 0.8 0.810 V 5.0V Reference Voltage l 4.925 5.0 5.075 V 3.3V Reference Voltage l 3.25 3.3 3.35 V 1.8V Reference Voltage l 1.773 1.8 1.827 V Feedback Voltage Line Regulation 0.004 0.02 %/V Feedback Pin Input Current –20 20 nA Minimum On-Time ILOAD = 1.5A, SYNC = 0V l 30 50 ns ILOAD = 1.5A, SYNC = 3.4V l 30 50 ns Oscillator Frequency RT = 133k l 270 300 330 kHz RT = 35.7k l 0.94 1 1.06 MHz RT = 15k l 1.85 2 2.15 MHz RT = VCC l 1.8 2 2.2 MHz Top Power NMOS Current Limit VCC = 3.4V l 4.5 5.1 6.2 A Bottom Power NMOS Current Limit VCC = 3.4V 3 4 5 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –1.5 1.5 µA EN/UV Pin Threshold EN/UV Falling l 0.7 0.74 0.78 V EN/UV Pin Hysteresis 30 mV EN/UV Pin Current VEN/UV = 2V –20 20 nA PG Upper Threshold Offset from VFB VFB Falling l 5.2 7 8.8 % PG Lower Threshold Offset from VFB VFB Rising l –9.3 –7.5 –5.7 % PG Hysteresis 0.3 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 600 1200 Ω SYNC Threshold SYNC DC and Clock Low Level Voltage 0.4 V SYNC Clock High Level Voltage 1.5 V SYNC DC High Level Voltage 2.8 V SYNC Pin Current VSYNC = 6V 120 µA SS Source Current l 1 2 3 µA SS Pull-Down Resistance Fault Condition, SS = 0.1V 160 Ω Error Amplifier Transconductance VC = 1.25V 1.3 mS VC Source Current VFB = 0.6V, VVC = 1.25V 170 µA VC Sink Current VFB = 1.0V, VVC = 1.25V 170 µA VC Pin to Switch Current Gain 4.8 A/V
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings than 125°C. The junction temperature (TJ, in °C) is calculated from the may cause permanent damage to the device. Exposure to any Absolute ambient temperature (TA, in °C) and power dissipation in the IC (PD, in Maximum Rating condition for extended periods may affect device watts) according to the formula: reliability and lifetime. TJ = TA + (PD • θJA), where θJA (in °C/W) is the package thermal
Note 2:
The LT8653SE is guaranteed to meet performance specifications impedance. from 0°C to 125°C junction temperature. Specifications over the
Note 3:
This IC includes overtemperature protection that is intended to –40°C to 125°C operating junction temperature range are assured by protect the device during overload conditions. Junction temperature will design, characterization and correlation with statistical process controls. exceed 150°C when overtemperature protection is active. Continuous The LT8653SI is guaranteed over the full –40°C to 125°C operating operation above the specified maximum operating junction temperature junction temperature range. High junction temperatures degrade operating will reduce lifetime. lifetimes. Operating lifetime is derated at junction temperatures greater Rev. 0 For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Electrical Characteristics Pin Configuration Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Package Description Typical Application Related Parts
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