Datasheet Si2399DS (Vishay)

ПроизводительVishay
ОписаниеP-Channel 20-V (D-S) MOSFET
Страниц / Страница10 / 1 — Si2399DS. P-Channel 20-V (D-S) MOSFET. FEATURES. MOSFET PRODUCT SUMMARY. …
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Язык документаанглийский

Si2399DS. P-Channel 20-V (D-S) MOSFET. FEATURES. MOSFET PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V)

Datasheet Si2399DS Vishay

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Полевой транзистор, P-канальный, 20 В, 6 А
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Россия
YJL2305B, MOSFET-транзистор Pкан 20В -5.4А [SOT-23] (=SI2399DS-T1-GE3 =DMP2110U-7=SI3415A-TP)
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SI2399DS-T1-GE3
Vishay
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SI2399DS-T1-GE3
Vishay
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Vishay
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Si2399DS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY

Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition
0.034 at VGS = - 10 V - 6e • TrenchFET® Power MOSFET - 20 0.045 at V 10 nC GS = - 4.5 V - 6e • 100 % Rg Tested 0.067 at VGS = - 2.5 V - 5.2 • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch • PA Switch • DC/DC Converters
TO-236
(SOT-23) G 1 3 D S 2 Top View Si2399DS (O1)* * Marking Code
Ordering Information:
Si2399DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 TC = 25 °C - 6e T Continuous Drain Current (T C = 70 °C - 5.8 J = 150 °C) ID TA = 25 °C - 5.1b, c T A A = 70 °C - 4.1b, c Pulsed Drain Current IDM - 20 T - 2.1 Continuous Source-Drain Diode Current C = 25 °C IS TA = 25 °C - 1.0b, c TC = 25 °C 2.5 T Maximum Power Dissipation C = 70 °C 1.6 PD W TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 1