Si2399DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 I = 5.1 A D 10 0.06 ) (A T = 150 °C J rrent u 0.04 T = 25 °C J -Resistance (Ω) n O ource C 1 - S T = 25 °C J ) - n o I S T = 125 °C DS( J 0.02 R 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 V - Source-to-Drain Voltage (V) SD V - Gate-to-Source Voltage (V) GS Source-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source Voltage 1.1 10 8 1.0 ) 6 (V W I = 250 μA D (th) 0.8 er ( GS w V Po 4 0.7 2 TA = 25 °C 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J Threshold VoltageSingle Pulse Power 100 Limited by R * DS(on) 10 ) 100 μs (A rrent u 1 ms 1 C n 10 ms rai D - I D 100 ms 0.1 1 s, 10 s DC T = 25 °C BVDSS Limited C Single Pulse 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on) Safe Operating Area www.vishay.com Document Number: 67343 4 S11-0239-Rev. A, 14-Feb-11
