Si2399DS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ransient 0.2 T e v 0.1 Impedance Notes: fecti Ef 0.1 PDM 0.05 Thermal t1 ormalized 0.02 t2 N t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 166 °C/W 3. T (t) JM - TA = PDMZthJA 4. Surface Mounted Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 ransient T e v 0.1 Impedance fecti Ef 0.1 0.05 Thermal 0.02 ormalized N Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67343. www.vishay.com Document Number: 67343 6 S11-0239-Rev. A, 14-Feb-11
Купить Si2399DS-T1-GE3 на РадиоЛоцман.Цены — от 4.63 до 148 ₽
