Datasheet BSP122 (Nexperia) - 4

Philips Semiconductors Product specification N-channel enhancement mode BSP122 vertical D-MOS transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 200 − − V IDSS drain-source leakage current VDS = 160 V; VGS = 0 − − 1 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 100 nA VGSth gate-source threshold voltage ID = 1 mA; VGS = VDS 0.4 − 2 V RDSon drain-source on-resistance ID = 750 mA; VGS = 10 V − 1.7 2.5 Ω ID = 20 mA; VGS = 2.4 V − 3 − Ω  Y  fs transfer admittance ID = 750 mA; VDS = 25 V 400 900 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 100 − pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 20 − pF Crss reverse transfer capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 10 − pF
Switching times (see Figs
2
and
3
)
ton turn-on time ID = 750 mA; VDD = 50 V; − 10 20 ns VGS = 0 to 10 V toff turn-off time ID = 750 mA; VDD = 50 V; − 45 60 ns VGS = 0 to 10 V handbook, halfpage 90 % handbook, halfpage VDD = 50 V INPUT 10 % 90 % 10 V OUTPUT ID 0 V 10 % 50 Ω ton toff MBB691 MBB692 VDD = 50 V. Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. 2001 May 18 3 Document Outline FEATURES QUICK REFERENCE DATA DESCRIPTION PINNING - SOT223 LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT223 DATA SHEET STATUS DEFINITIONS DISCLAIMERS NOTES