Клеммы, реле, разъемы Degson со склада в России

Datasheet AD8222-KGD (Analog Devices) - 3

ПроизводительAnalog Devices
ОписаниеPrecision, Dual-Channel Instrumentation Amplifier
Страниц / Страница8 / 3 — Known Good Die. AD8222-KGD. SPECIFICATIONS. Table 1. Single-Ended and …
ВерсияA
Формат / Размер файлаPDF / 274 Кб
Язык документаанглийский

Known Good Die. AD8222-KGD. SPECIFICATIONS. Table 1. Single-Ended and Differential Output Configuration Parameter

Known Good Die AD8222-KGD SPECIFICATIONS Table 1 Single-Ended and Differential Output Configuration Parameter

10 предложений от 10 поставщиков
Микросхема Буферный усилитель, IC OPAMP INSTR 1.2MHz 16LFCSP
ЧипСити
Россия
AD8222HACPZ-RL
Analog Devices
419 ₽
AllElco Electronics
Весь мир
AD8222HACPZ-RL
Analog Devices
488 ₽
TradeElectronics
Россия
AD8222HACPZ-RL
Analog Devices
по запросу
Maybo
Весь мир
AD8222HACPZ-RL
Analog Devices
по запросу
Новое семейство LED-драйверов XLC компании MEAN WELL с дополнительными возможностями диммирования

Модельный ряд для этого даташита

Текстовая версия документа

Known Good Die AD8222-KGD SPECIFICATIONS
Supply voltage (VS) = ±15 V, REFx voltage (VREF) = 0 V, TA = 25°C, G = 1, and load resistance (RL) = 2 kΩ, unless otherwise noted.
Table 1. Single-Ended and Differential Output Configuration Parameter Test Conditions/Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) Common-mode voltage (VCM)= −10 V to +10 V CMRR DC to 60 Hz 1 kΩ source imbalance G = 1 80 dB G = 10 100 dB G = 100 120 dB G = 1000 130 dB CMRR at 4 kHz G = 1 80 dB G = 10 90 dB G = 100 100 dB G = 1000 100 dB CMRR Drift TA = −40°C to +85°C, G = 1 0.07 µV/V/°C NOISE Voltage Noise, 1 kHz RTI noise = √(e 2 NI + (eNO/G)2) Input Voltage Noise, eNI +IN voltage (V+IN), −IN voltage (V−IN), 8 nV/√Hz VREF = 0 V Output Voltage Noise, eNO V+IN, V−IN, VREF = 0 V 75 nV/√Hz Return to Input (RTI) Frequency = 0.1 Hz to 10 Hz G = 1 2 µV p-p G = 10 0.5 µV p-p G = 100 to 1000 0.25 µV p-p Current Noise Frequency = 1 kHz 40 fA/√Hz Frequency = 0.1 Hz to 10 Hz 6 pA p-p VOLTAGE OFFSET, VOS RTI VOS = (VOSI) + (VOSO/G) Input Offset, VOSI VS = ±5 V to ±15 V 120 µV Over Temperature TA = −40°C to +85°C 150 µV Average Temperature Coefficient 0.4 µV/°C Output Offset, VOSO VS = ±5 V to ±15 V 500 µV Over Temperature TA = −40°C to +85°C 0.8 mV Average Temperature Coefficient 9 µV/°C Offset RTI vs. Power Supply Ratio (PSR) VS = ±2.3 V to ±18 V G = 1 90 110 dB G = 10 110 120 dB G = 100 124 130 dB G = 1000 130 140 dB INPUT CURRENT (PER CHANNEL) Input Bias Current, IBIAS 0.5 2.0 nA Over Temperature TA = −40°C to +85°C 3.0 nA Average Temperature Coefficient 1 pA/°C Input Offset Current, IOFFSET 0.2 1 nA Over Temperature TA = −40°C to +85°C 1.5 nA Average Temperature Coefficient 1 pA/°C Rev. A | Page 3 of 8 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Absolute Maximum Ratings Maximum Power Dissipation ESD Caution Pin Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка