Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175 °C MOSFETFEATURESPRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21VDS (V)RDS(on) ( Ω )ID (A)Definition 0.120 at VGS = - 10 V ± 3.5 - 60 • TrenchFET® Power MOSFETs 0.15 at VGS = - 4.5 V ± 3.1 • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View D Ordering Information: Si9407AEY-T1-E3 (Lead (Pb)-free) Si9407AEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter SymbolLimitUnit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TA = 25 °C ± 3.5 Continuous Drain Current (T I J = 150 °C)a D TA = 70 °C ± 3.0 A Pulsed Drain Current IDM ± 30 Continuous Source Current (Diode Conduction)a IS - 2.5 TA = 25 °C 3.0 Maximum Power Dissipationa PD W TA = 70 °C 2.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter SymbolLimitUnit Maximum Junction-to-Ambienta RthJA 50 °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 70742 www.vishay.com S09-1341-Rev. E, 13-Jul-09 1
