Datasheet NTZD3155C (ON Semiconductor) - 2

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NTZD3155C Thermal Resistance Ratings Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 2) RqJA 500 °C/W Junction−to−Ambient – t = 5 s (Note 2) 447 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS N VGS = 0 V ID = 250 mA 20 V P ID = −250 mA −20 Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 18 mV/°C Temperature Coefficient Zero Gate Voltage Drain Current IDSS N VGS = 0 V, VDS = 16 V TJ = 25°C 1.0 mA P VGS = 0 V, VDS= −16 V −1.0 N VGS = 0 V, VDS = 16 V TJ = 125°C 2.0 mA P VGS = 0 V, VDS= − 16V −5.0 Gate−to−Source Leakage Current IGSS P VDS = 0 V, VGS = ±4.5 V $2.0 mA N $5.0
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(TH) N VGS = VDS ID = 250 mA 0.45 1.0 V P ID = −250 mA −0.45 −1.0 Gate Threshold VGS(TH)/TJ −1.9 −mV/°C Temperature Coefficient Drain−to−Source On Resistance RDS(on) N VGS = 4.5 V, ID = 540 mA 0.4 0.55 P VGS = −4.5V, ID = −430 mA 0.5 0.9 N VGS = 2.5 V, ID = 500 mA 0.5 0.7 W P VGS = −2.5V, ID = −300 mA 0.6 1.2 N VGS = 1.8 V, ID = 350 mA 0.7 0.9 P VGS = −1.8V, ID = −150 mA 1.0 2.0 Forward Transconductance gFS N VDS = 10 V, ID = 540 mA 1.0 S P VDS = −10 V, ID = −430 mA 1.0
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS 80 150 Output Capacitance COSS N f = 1 MHz, VGS = 0 V 13 25 VDS = 16 V Reverse Transfer Capacitance CRSS 10 20 pF Input Capacitance CISS 105 175 Output Capacitance COSS P f = 1 MHz, VGS = 0 V 15 30 VDS = −16 V Reverse Transfer Capacitance CRSS 10 20 3. Pulse Test: pulse width v300 ms, duty cycle v2% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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