HAT2169H Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 100 30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 50 100 150 Case Temperature 1m PW s DC = 1 Op 0 m s era tio n 10 1 Operation in this area is limited by RDS(on) 0.1 0.01 0.1 200 1 3 10 30 100 VDS (V) 100 Pulse Test VDS = 10 V Pulse Test 3.6 V 3.4 V 60 80 60 3.2 V 40 VGS = 3.0 V 20 Drain Current Drain Current 0.3 Typical Transfer Characteristics ID (A) ID (A) 80 10 V 4.5 V 3.8 V Tc = 25°C 1 shot Pulse Drain to Source Voltage Tc (°C) Typical Output Characteristics 100 10 µs 0µ s 10 Tc = 75°C 40 20 25°C –25°C 0 2 4 6 8 Drain to Source Voltage 0 10 200 150 ID = 50 A 100 20 A 50 10 A 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 20, 2005 page 3 of 7 16 20 VGS (V) 6 10 8 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 4 Gate to Source Voltage VDS (V) 250 2 100 Pulse Test 30 10 VGS = 4.5 V 3 10 V 1 0.3 0.1 1 3 10 30 Drain Current 100 300 ID (A) 1000
