Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2169H 10 Pulse Test 8 ID = 10 A, 20 A 50 A 6 VGS = 4.5 V 4 10 A, 20 A, 50 A 2 10 V 0 -25 0 25 50 75 100 125 150 Case Temperature Tc 1000 300 100 Tc = –25°C 30 10 75°C 3 25°C 1 0.1 0.1 3 10 30 100 Typical Capacitance vs. Drain to Source Voltage 10000 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 1 Drain Current ID (A) 100 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 Reverse Drain Current 30 3000 1000 Coss 300 Crss 100 30 VGS = 0 f = 1 MHz 10 100 0 IDR (A) 5 12 VDS = 25 V 20 8 VDD 10 V 4 5V 0 40 80 Gate Charge Rev.4.00 Sep 20, 2005 page 4 of 7 120 160 Qg (nc) 20 25 30 0 200 1000 Switching Time t (ns) 30 16 VGS (V) VGS VDD = 5 V 10 V 25 V 40 10 20 ID = 50 A 15 Switching Characteristics Gate to Source Voltage 50 10 Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 0.3 (°C) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS = 10 V Pulse Test 0.3 300 100 td(off) 30 td(on) tf 10 tr 3 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty < 1 % 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100
