Datasheet PMV20EN (Nexperia) - 6

Nexperia PMV20EN 30 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V breakdown voltage VGSth gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C 1 1.5 2 V voltage IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state VGS = 10 V; ID = 6 A; Tj = 25 °C - 17 21 mΩ resistance VGS = 10 V; ID = 6 A; Tj = 150 °C - 27 34 mΩ VGS = 4.5 V; ID = 5.4 A; Tj = 25 °C - 21 26 mΩ gfs forward VDS = 10 V; ID = 2 A; Tj = 25 °C - 13 - S transconductance RG gate resistance f = 1 MHz; Tj = 25 °C - 1.7 - Ω
Dynamic characteristics
QG(tot) total gate charge VDS = 15 V; ID = 5 A; VGS = 10 V; - 7.2 10.8 nC Q Tj = 25 °C GS gate-source charge - 1 - nC QGD gate-drain charge - 0.7 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 435 - pF C Tj = 25 °C oss output capacitance - 90 - pF Crss reverse transfer - 35 - pF capacitance td(on) turn-on delay time VDS = 15 V; ID = 5 A; VGS = 10 V; - 9 - ns t RG(ext) = 6 Ω; Tj = 25 °C r rise time - 17 - ns td(of ) turn-of delay time - 9 - ns tf fall time - 8 - ns
Source-drain diode
VSD source-drain voltage IS = 1.1 A; VGS = 0 V; Tj = 25 °C - 0.75 1.2 V PMV20EN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. Al rights reserved
Product data sheet 5 July 2018 6 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents