Datasheet 1N60, 1N60P (DEC)

ПроизводительDEC
ОписаниеGermanium Diodes
Страниц / Страница2 / 1 — 1N60,. 1N60P. GERMANIUM. DIODES. Features. ·. Metal. silicon. junction,. …
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Язык документаанглийский

1N60,. 1N60P. GERMANIUM. DIODES. Features. ·. Metal. silicon. junction,. majority. carrier. conduction. ·. High. current. capability,. Low. forward

Datasheet 1N60, 1N60P DEC

Модельный ряд для этого даташита

1N60
1N60P

Текстовая версия документа

1N60, 1N60P GERMANIUM DIODES Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop DO-35(GLASS) · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. · Small temperature coefficient of forward characteristics 1.083(27.5) D IA. MIN. · Satisfactory Wave detection efficiency · For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier 0.154(3.9) MAX. Mechanical Data 1.083(27.5) · Case : DO-35 glass case MIN. 0.020(0.52) MAX. · Polarity : Color band denotes cathode end DIA. · Weight : Approx. 0.13 gram Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Value Symbols Parameters Units 1N60 1N60P VRRM Zenerepetitive Peak Reverse Voltage 40 45 Volts lF Forward Continuous Crrent TA=25℃ 30 50 mA lFSM Peak Forward Surge Current(t=1S) 150 500 mA TSTG/TJ Storage junction Temperature Range -65 to+125 ℃ TL Maximum Lead Temperature for soldering 10S at 4mm from Case 230 ℃ Electrical characteristics Value Symbols Parameters Test Conditions Units Min Typ. Max. 1N60 0.32 0.5 IF=1mA 1N60P 0.24 0.5 VF Forward Voltage IF=30mA Volts 1N60 0.65 1.0 IF=200mA 1N60P 0.65 1.0 1N60 0.1 l 0.5 R Reverse Current VR=15V μA 1N60P 0.5 1.0 VR=1V f=1MHz 1N60 2.0 Junction Capacitance CJ pF VR=10V f=1MHz 1N60P 6.0 η Detection Effcienc(See diagram 4) VI=3V f=30MHz CL=10pF RL=3.8kΩ 60 % trr Revese Recovery time IF=IR=1mA Irr=1mA RC=100Ω 1 ns RθJA Junction Amblent Thermal Resistance 400 ℃/W