Datasheet STB11NM60T4, STP11NM60 (STMicroelectronics) - 2

link to page 2 link to page 2 link to page 2
STB11NM60T4, STP11NM60 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit
VDS Gate-source voltage 600 V VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC= 100 °C 7 IDM (1) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 160 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature range -65 to 150 °C Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 2. Thermal data Value Symbol Parameter Unit D2PAK TO-220
Rthj-case Thermal resistance junction-case 0.78 Rthj-amb Thermal resistance junction-ambient 62.5 °C/W R (1) thj-pcb Thermal resistance junction-pcb 35 1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Table 3. Avalanche characteristics Symbol Parameter Value Unit
IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax) 5.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ
DS3653
-
Rev 7 page 2/21
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 D²PAK (TO-263) type A package information 4.2 D²PAK packing information 4.3 D²PAK (TO-263) type B package information 4.4 D²PAK type B packing information 4.5 TO-220 type A package information Revision history