Datasheet STB11NM60T4, STP11NM60 (STMicroelectronics) - 7

STB11NM60T4, STP11NM60 Test circuits 3 Test circuits Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior
VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 μF + μF VDD V I D G= CONST V 100 Ω D.U.T. GS R pulse width + G D.U.T. VGS 2.7 kΩ 2200 VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1
Figure 13. Test circuit for inductive load switching and Figure 14. Unclamped inductive load test circuit diode recovery times
A A A L D VD fast 100 µH G D.U.T. diode 2200 3.3 S B + µF µF V B B 3.3 1000 DD µF 25 Ω µF D + VDD ID G D.U.T. + RG S D.U.T. Vi _ pulse width AM01471v1 AM01470v1
Figure 16. Switching time waveform Figure 15. Unclamped inductive waveform
ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM 10% VDS 10% ID 0 VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1
DS3653
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Rev 7 page 7/21
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 D²PAK (TO-263) type A package information 4.2 D²PAK packing information 4.3 D²PAK (TO-263) type B package information 4.4 D²PAK type B packing information 4.5 TO-220 type A package information Revision history