Datasheet BCP56 (ON Semiconductor)

ПроизводительON Semiconductor
ОписаниеNPN Silicon Epitaxial Transistor
Страниц / Страница6 / 1 — www.onsemi.com. Features. MEDIUM POWER NPN SILICON. HIGH CURRENT …
Версия14
Формат / Размер файлаPDF / 71 Кб
Язык документаанглийский

www.onsemi.com. Features. MEDIUM POWER NPN SILICON. HIGH CURRENT TRANSISTOR. SURFACE MOUNT. MAXIMUM RATINGS. Rating. Symbol. Value. Unit

Datasheet BCP56 ON Semiconductor, Версия: 14

BCP56 Купить ЦенаКупить BCP56 на РадиоЛоцман.Цены — от 0,01 до 24 540
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Исполнение: SOT223. Название BCP56-16.115 Бренд NXP Описание Транзистор биполярный стандартный BCP56-16.115. Описание в формате PDF
Элитан
Россия
BCP56-16TF
NXP
0 ₽
Стандарт СИЗ
Россия
BCP56T1 (Philips-BCP56-16,115)
Philips
2 ₽
Контест
Россия
BCP56-16T1G
ON Semiconductor
5 ₽
Десси
Россия
Транзистор биполярный стандартный BCP56-16.115
NXP
18 ₽

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Текстовая версия документа

link to page 1 link to page 1 link to page 5 BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.
www.onsemi.com Features MEDIUM POWER NPN SILICON
• High Current: 1.0 A •
HIGH CURRENT TRANSISTOR
The SOT−223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the
SURFACE MOUNT
possibility of damage to the die • Available in 12 mm Tape and Reel COLLECTOR 2,4 Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel • PNP Complement is BCP53T1G BASE • 1 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 EMITTER 3 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 4 1
MAXIMUM RATINGS
(T 2 C = 25°C unless otherwise noted) 3
Rating Symbol Value Unit SOT−223 CASE 318E
Collector−Emitter Voltage VCEO 80 Vdc
STYLE 1
Collector−Base Voltage VCBO 100 Vdc Emitter−Base Voltage VEBO 5 Vdc
MARKING DIAGRAM
Collector Current IC 1 Adc Collector Current − Peak (Note 1) ICM 2 Adc AYW Total Power Dissipation P XXXXXG D @ T G A = 25°C (Note 2) 1.5 W Derate above 25°C 12 mW/°C 1 Operating and Storage TJ, Tstg − 65 to 150 °C XXXXX = Specific Device Code Temperature Range A = Assembly Location Y = Year
THERMAL CHARACTERISTICS
W = Work Week
Characteristic Symbol Max Unit
G = Pb−Free Package (Note: Microdot may be in either location) Thermal Resistance, RqJA 83.3 °C/W Junction−to−Ambient (surface mounted)
ORDERING INFORMATION
Maximum Temperature for TL See detailed ordering, marking and shipping information in the Soldering Purposes 260 °C package dimensions section on page 5 of this data sheet. Time in Solder Bath 10 Sec Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Reference SOA curve. 2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. © Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2018 − Rev. 14 BCP56T1/D