Datasheet NSS40200L, NSV40200L (ON Semiconductor) - 3

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NSS40200L, NSV40200L ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mAdc, IB = 0) −40 − − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −0.1 mAdc, IE = 0) −40 − − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = −0.1 mAdc, IC = 0) −7.0 − − Collector Cutoff Current ICBO mAdc (VCB = −40 Vdc, IE = 0) − − −0.1 Emitter Cutoff Current IEBO mAdc (VEB = −7.0 Vdc) − − −0.1
ON CHARACTERISTICS
DC Current Gain (Note 4) hFE (IC = −10 mA, VCE = −2.0 V) 250 − − (IC = −500 mA, VCE = −2.0 V) 220 300 − (IC = −1.0 A, VCE = −2.0 V) 180 − − (IC = −2.0 A, VCE = −2.0 V) 150 − − Collector − Emitter Saturation Voltage (Note 4) VCE(sat) V (IC = −0.1 A, IB = −0.010 A) (Note 5) − −0.010 −0.017 (IC = −1.0 A, IB = −0.100 A) − −0.080 −0.095 (IC = −1.0 A, IB = −0.010 A) − −0.135 −0.170 (IC = −2.0 A, IB = −0.200 A) − −0.135 −0.170 Base − Emitter Saturation Voltage (Note 4) VBE(sat) V (IC = −1.0 A, IB = −0.01 A) − − −0.900 Base − Emitter Turn−on Voltage (Note 4) VBE(on) V (IC = −1.0 A, VCE = −2.0 V) − − −0.900 Cutoff Frequency fT MHz (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) 100 − − Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 325 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 62 pF
SWITCHING CHARACTERISTICS
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) td − − 60 ns Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tr − − 120 ns Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) ts − − 400 ns Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) tf − − 130 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested.
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