DatasheetsDatasheet NST489AMT1G, NSVT489AMT1G (ON …
Datasheet NST489AMT1G, NSVT489AMT1G (ON Semiconductor)
Производитель | ON Semiconductor |
Описание | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
Страниц / Страница | 4 / 1 — www.onsemi.com. 30 VOLTS, 3.0 AMPS. NPN TRANSISTOR. Features. TSOP−6. … |
Версия | 9 |
Формат / Размер файла | PDF / 62 Кб |
Язык документа | английский |
www.onsemi.com. 30 VOLTS, 3.0 AMPS. NPN TRANSISTOR. Features. TSOP−6. CASE 318G. STYLE 6. MAXIMUM RATINGS. Rating. Symbol. Max. Unit

26 предложений от 11 поставщиков High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
| NSVT489AMT1G ON Semiconductor | от 6.26 ₽ | |
| NSVT489AMT1G ON Semiconductor | от 13 ₽ | |
| NSVT489AMT1G ON Semiconductor | от 31 ₽ | |
| NSVT489AMT1G ON Semiconductor | по запросу | |
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www.onsemi.com
Portable Applications
30 VOLTS, 3.0 AMPS NPN TRANSISTOR Features
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
TSOP−6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CASE 318G STYLE 6
Compliant COLLECTOR
MAXIMUM RATINGS
(T 1, 2, 5, 6 A = 25°C)
Rating Symbol Max Unit
3 Collector-Emitter Voltage VCEO 30 V BASE Collector-Base Voltage VCBO 50 V Emitter-Base Voltage V 4 EBO 5.0 V EMITTER Collector Current − Continuous IC 2.0 A Collector Current − Peak ICM 3.0 A
DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
N2 M G Total Device Dissipation PD (Note 1) G TA = 25°C 535 mW Derate above 25°C 4.3 mW/°C Thermal Resistance, RqJA (Note 1) °C/W Junction−to−Ambient 234 N2 = Specific Device Code M = Date Code* Total Device Dissipation PD (Note 2) G = Pb−Free Package TA = 25°C 1.180 W (Note: Microdot may be in either location) Derate above 25°C 9.4 mW/°C *Date Code orientation may vary depending upon Thermal Resistance, RqJA (Note 2) °C/W manufacturing location. Junction−to−Ambient 106 Thermal Resistance, RqJL (Note 1) 110 °C/W
ORDERING INFORMATION ORDERING INFORMA
Junction−to−Lead #1 RqJL (Note 2) 50 °C/W Total Device Dissipation P
Device Package Shipping
† Dsingle W (Single Pulse < 10 s) (Notes 2 and 3) 1.75 NST489AMT1G TSOP−6 3,000 / Junction and Storage TJ, Tstg −55 to +150 °C (Pb−Free) Tape & Reel Temperature Range NSVT489AMT1G TSOP−6 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, 1. FR− 4 with 1 oz and 3.9 mm2 of copper area. including part orientation and tape sizes, please 2. FR− 4 with 1 oz and 645 mm2 of copper area. refer to our Tape and Reel Packaging Specifications 3. Refer to Figure 8. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2018 − Rev. 9 NST489AMT1/D