Datasheet NST489AMT1G, NSVT489AMT1G (ON Semiconductor) - 3
| Производитель | ON Semiconductor |
| Описание | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
| Страниц / Страница | 4 / 3 — NST489AMT1G, NSVT489AMT1G. Figure 5. VBE(sat) versus Ic. Figure 6. Safe … |
| Версия | 9 |
| Формат / Размер файла | PDF / 62 Кб |
| Язык документа | английский |
NST489AMT1G, NSVT489AMT1G. Figure 5. VBE(sat) versus Ic. Figure 6. Safe Operating Area
24 предложений от 13 поставщиков ON Semi NST489AMT1G NPN Bipolar Transistor; 2 A; 30 V; 6-Pin TSOP |
| NST489AMT1G
ON Semiconductor | от 6.07 ₽ | |
| NST489AMT1G
ON Semiconductor | от 13 ₽ | |
| NST489AMT1G
ON Semiconductor | от 49 ₽ | |
| NST489AMT1G
ON Semiconductor | по запросу | |
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Текстовая версия документа
NST489AMT1G, NSVT489AMT1G
1.2 10.00 1.0 3.0 Ic/Ib = 10 0.8 1.00 Ic/Ib = 100 0.6 (sat) (V) OR CURRENT (A) 1 ms BEV 10 ms 0.4 0.10 100 ms 1 s 0.2 COLLECT I C SINGLE PULSE Tamb = 25°C dc 0 0.01 0.001 0.01 0.1 1 2 0.10 1.00 10.00 100.00 Ic (A) VCE(sat) (V)
Figure 5. VBE(sat) versus Ic Figure 6. Safe Operating Area
1000 100 PRODUCT (MHz) , CURRENT−GAIN BANDWIDTH f T 10 1 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0 D = 0.5 0.2 THERMAL 0.1 0.1 0.05 ANCE TRANSIENT 0.02 RESIST 0.01 0.01 SINGLE PULSE r(t), NORMALIZED 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (sec)
Figure 8. Normalized Thermal Response www.onsemi.com 3
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