Datasheet PMEG120G30ELP (Nexperia) - 5

Nexperia PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier
aaa-031260 10 aaa-031261 10-3 I I R F (A) (A) 10-4 (1) 1 (2) 10-5 (3) 10-1 10-6 10-7 (4) 10-2 10-8 (1) (3) (5) (2) (4) (6) 10-9 10-3 (5) 10-10 10-4 10-11 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 VF (V) VR (V) pulsed condition pulsed condition (1) Tj = 175 °C (1) Tj = 175 °C (2) Tj = 150 °C (2) Tj = 150 °C (3) Tj = 125 °C (3) Tj = 125 °C (4) Tj = 85 °C (4) Tj = 85 °C (5) Tj = 25 °C (5) Tj = 25 °C (6) Tj = -40 °C
Fig. 4. Reverse current as a function of reverse Fig. 3. Forward current as a function of forward voltage; typical values voltage; typical values
aaa-031262 200 aaa-031263 3 Cd (pF) P (4) F(AV) 160 (W) 2 (3) 120 (2) 80 (1) 1 40 0 0 0 40 80 120 0 1.5 3.0 4.5 VR (V) IF(AV) (A) f = 1 MHz; Tamb = 25 °C Tj = 175 °C
Fig. 5. Diode capacitance as a function of reverse
(1) δ = 0.1
voltage; typical values
(2) δ = 0.2 (3) δ = 0.5 (4) δ = 1; DC
Fig. 6. Average forward power dissipation as a function of average forward current; typical values
PMEG120G30ELP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 26 May 2020 5 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents