Datasheet PMEG120G30ELP (Nexperia) - 9
| Производитель | Nexperia |
| Описание | 120 V, 3 A Silicon Germanium (SiGe) rectifier |
| Страниц / Страница | 14 / 9 — Nexperia. PMEG120G30ELP. 120 V, 3 A Silicon Germanium (SiGe) rectifier. … |
| Версия | 26052020 |
| Формат / Размер файла | PDF / 252 Кб |
| Язык документа | английский |
Nexperia. PMEG120G30ELP. 120 V, 3 A Silicon Germanium (SiGe) rectifier. Fig. 17. Duty cycle definition. Quality information
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Текстовая версия документа
Nexperia PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier
t1 P duty cycle δ = t t 2 2 t1 t 006aaa812
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations: IF(AV)=IM×δ with IM defined as peak current IRMS=IF(AV) at DC, and IRMS=IM×√δ with IRMS defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
12. Package outline
2.7 1.1 2.3 0.9 0.6
1
0.3 5.0 4.0 4.4 3.6
2
1.9 0.22 1.6 0.10 Dimensions in mm 07-09-12
Fig. 18. Package outline CFP5 (SOD128)
PMEG120G30ELP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 26 May 2020 9 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents
