Datasheet BLF974P (Ampleon) - 4

BLF974P HF / VHF power LDMOS transistor
amp01077 300 Coss oss oss (pF) (pF) (pF) 250 200 150 100 50 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per section Table 8. RF characteristics
Test signal: CW pulsed; tp = 100 s;  = 10 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 500 W 24.5 25.7 - dB RLin input return loss PL = 500 W - 19 15 dB D drain efficiency PL = 500 W 74 76 - %
7. Test information 7.1 Ruggedness in class-AB operation
The BLF974P is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA per section; PL = 500 W; f = 225 MHz; CW pulsed (tp = 100 s;  = 10 %). BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 4 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents