Datasheet BLF974P (Ampleon) - 8

BLF974P HF / VHF power LDMOS transistor
amp01218 amp01219 26 90 Gp G ηD (1) (1) (1) (2) (2) (2) (3) (3) (3) (4) (4) (4) (5) (5) (5) (dB) (dB) (dB) (%) (%) (%) 25 70 24 23 50 (5) (5) (5) (4) (4) (4) 22 (3) (3) (3) (2) (2) (2) 30 21 (1) (1) (1) 20 10 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 PL (W) PL (W) IDq = 2  50 mA; f = 225 MHz; tp = 100 s;  = 10 %. IDq = 2  50 mA; f = 225 MHz; tp = 100 s;  = 10 %. (1) VDS = 30 V (1) VDS = 30 V (2) VDS = 35 V (2) VDS = 35 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 45 V (4) VDS = 45 V (5) VDS = 50 V (5) VDS = 50 V
Fig 7. Power gain as a function of output power; Fig 8. Drain efficiency as a function of output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 8 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents