Datasheet BLF978P (Ampleon) - 4

BLF978P HF / VHF power LDMOS transistor
amp01282 600 Coss oss oss (pF) (pF) (pF) 500 400 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per section Table 8. RF characteristics
Test signal: CW pulsed; tp = 100 s;  = 10 %; f = 225 MHz; RF performance at VDS = 50 V; IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 1200 W 23 24.5 - dB RLin input return loss PL = 1200 W - 20 12 dB D drain efficiency PL = 1200 W 78 80.6 - % BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 4 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents