Datasheet BLF978P (Ampleon) - 8

BLF978P HF / VHF power LDMOS transistor 8.4 Graphical data 8.4.1 1-Tone CW pulsed
amp01284 28 90 Gp G ηD (dB) (dB) (dB) (%) (%) (%) 26 G 70 p G 24 50 ηD 22 30 20 10 0 300 600 900 1200 1500 PL (W) VDS = 50 V; IDq = 2  50 mA; f = 225 MHz; tp = 100 s; VDS = 50 V; IDq = 2  50 mA; f = 225 MHz; tp = 100 s;  = 10 %.  = 10 %. (1) PL(1dB) = 60.79 dBm (1200 W) (2) PL(3dB) = 61.17 dBm (1310 W)
Fig 9. Power gain and drain efficiency as function of Fig 10. Output power as a function of input power; output power; typical values typical values
BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents