Datasheet BLF978P (Ampleon) - 10

BLF978P HF / VHF power LDMOS transistor
amp01290 amp01291 81.6 24.8 ηD Gp G (%) (%) (%) (dB) (dB) (dB) 81.2 24.6 80.8 24.4 80.4 24.2 80 24 79.6 79.2 23.8 0 20 40 60 80 100 0 20 40 60 80 100 T (°C) T (°C) VDS = 50 V; IDq = 2  50 mA; f = 225 MHz; at PL(2dB). VDS = 50 V; IDq = 2  50 mA; f = 225 MHz; at PL(2dB).
Fig 15. Drain efficiency as a function of temperature; Fig 16. Power gain as a function of temperature; typical values typical values
amp01292 1300 PL P (W) (W) (W) 1280 1260 1240 1220 1200 0 20 40 60 80 100 T (°C) VDS = 50 V; IDq = 2  50 mA; f = 225 MHz; at PL(2dB).
Fig 17. Output power as a function of temperature; typical values
BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 10 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents