NXP Semiconductors Product data sheet High-speed diodes 1N4148; 1N4448 mgd290 MGD004 103 1.2 handbook, halfpage IR Cd (µA) (pF) 102 1.0 (1) (2) 10 0.8 1 0.6 10−1 10−2 0.4 0 100 200 0 10 20 T V j (°C) R (V) (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 2004 Aug 10 5 Document Outline Features Applications Description Marking Ordering information Limiting values Electrical characteristics Thermal characteristics Graphical data Package outline Data sheet status Disclaimers
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