Datasheet 1N5230 - 1N5267 (Vishay) - 3

1N5221 to 1N5267
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) W 500 600 ) W 500 ient (K/ 400 b 400 300 300 nction Am l l u er Dissipation (m J w 200 200 Resist. 100 100 m. T = constant - Total Po L tot P Ther 0 0 - 0 40 80 120 160 200 A 0 5 10 15 20 thJ 95 9602 T - Ambient Temperature (°C) R I - Lead Length (mm) 95 9611 amb Fig. 1 - Thermal Resistance vs. Lead Length Fig. 4 - Total Power Dissipation vs. Ambient Temperature 1000 15 ) V 10 100 /K) re Coefficient -4 u 5 (10 I = 5 mA Z Z V I = 5 mA 10 Z of oltage Change (m V 0 - - Temperat Z Z V V TK 1 - 5 0 5 10 15 20 25 0 10 20 30 40 50 95 9598 VZ - Z-Voltage (V) 95 9600 VZ - Z-Voltage (V) Fig. 2 - Typical Change of Working Voltage under Operating Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage Conditions at Tamb= 25 °C 1.3 200 V = V /V (25 °C) Ztn Zt Z 1.2 TKVZ = 10 x 10-4/K 150 8 x 10-4/K V = 2 V R 6 x 10-4/K 1.1 T = 25 °C 4 x 10-4/K j 100 2 x 10-4/K 1.0 0 - 2 x 10-4/K 50 0.9 - 4 x 10-4/K - Relative Voltage Change - Diode Capacitance (pF) D Ztn C V 0.8 0 - 60 0 60 120 180 240 0 5 10 15 20 25 95 9599 Tj - Junction Temperature (°C) 95 9601 VZ - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage vs. Fig. 6 - Diode Capacitance vs. Z-Voltage Junction Temperature Rev. 2.2, 11-Mar-2019
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