Datasheet AD8220-EP (Analog Devices) - 3

link to page 4
Enhanced Product AD8220-EP SPECIFICATIONS
+VS = 15 V, −VS = −15 V, VREF = 0 V, TA = 25°C, TOPR = −55°C to +125°C, G = 1, RL = 2 kΩ,1 unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR) TOPR CMRR from DC to 60 Hz with 1 kΩ Source VCM = ±10 V Imbalance G = 1 77 dB G = 10 92 dB G = 100 92 dB G = 1000 92 dB CMRR at 5 kHz VCM = ±10 V G = 1 72 dB G = 10 80 dB G = 100 80 dB G = 1000 80 dB NOISE Referred to input (RTI) noise = √(e 2 ni + (eno/G)2), TA Voltage Noise, 1 kHz Input Voltage Noise, eni VIN+, VIN− = 0 V 14 nV/√Hz Output Voltage Noise, eno VIN+, VIN− = 0 V 90 nV/√Hz RTI, 0.1 Hz to 10 Hz G = 1 5 µV p-p G = 1000 0.8 µV p-p Current Noise f = 1 kHz 1 fA/√Hz VOLTAGE OFFSET VOS = VOSI + VOSO/G Input Offset, VOSI TA −250 +250 µV Average Temperature Coefficient (TC) TOPR −10 +10 µV/°C Output Offset, VOSO TA −750 +750 µV Average TC TOPR −10 +10 µV/°C Offset RTI vs. Supply (PSR) VS = ±5 V to ±15 V, TOPR G = 1 80 dB G = 10 92 dB G = 100 92 dB G = 1000 92 dB INPUT CURRENT Input Bias Current TA 25 pA Over Temperature TOPR 100 nA Input Offset Current TA 2 pA Over Temperature TOPR 10 nA DYNAMIC RESPONSE Small Signal Bandwidth, −3 dB TA G = 1 1500 kHz G = 10 800 kHz G = 100 120 kHz G = 1000 14 kHz Settling Time 0.01% 10 V step, TA G = 1 5 µs G = 10 4.3 µs G = 100 8.1 µs G = 1000 58 µs Rev. A | Page 3 of 11 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE