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Datasheet AMP01 (Analog Devices) - 7

ПроизводительAnalog Devices
ОписаниеLow Noise, Precision Instrumentation Amplifier
Страниц / Страница29 / 7 — Data Sheet. AMP01. Table 3. AMP01A/AMP01E. AMP01B/AMP01F/AMP01G. …
ВерсияF
Формат / Размер файлаPDF / 439 Кб
Язык документаанглийский

Data Sheet. AMP01. Table 3. AMP01A/AMP01E. AMP01B/AMP01F/AMP01G. Parameter Symbol. Test. Conditions/Comments. Min. Typ. Max. Unit

Data Sheet AMP01 Table 3 AMP01A/AMP01E AMP01B/AMP01F/AMP01G Parameter Symbol Test Conditions/Comments Min Typ Max Unit

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Микросхема Буферный усилитель, ANALOG DEVICES AMP01BX Instrument Amplifier, 1 Amplifier, 40µV, 4.5V/µs, 570kHz, ± 4.5V to ± 18V, DIP
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Data Sheet AMP01
VS = ±15 V, RS = 10 kΩ, RL = 2 kΩ, TA = 25°C, unless otherwise noted.
Table 3. AMP01A/AMP01E AMP01B/AMP01F/AMP01G Parameter Symbol Test Conditions/Comments Min Typ Max Min Typ Max Unit
GAIN Gain Equation Accuracy G = (20 × RS)/RG, accuracy 0.3 0.6 0.5 0.8 % measured from G = 1 to 100 Gain Range G 0.1 10,000 0.1 10,000 V/V Nonlinearity G = 10001 0.0007 0.005 0.0007 0.005 % G = 1001 0.005 0.005 % G = 101 0.005 0.007 % G = 11 0.010 0.015 % Temperature Coefficient GTC 1 ≤ G ≤ 10001, 2 5 10 5 15 ppm°C OUTPUT RATING Output Voltage Swing VOUT RL= 2 kΩ ±13.0 ±13.8 ±13.0 ±13.8 V RL= 500 kΩ ±13.0 ±13.5 ±13.0 ±13.5 V RL= 50 kΩ ±2.5 ±4.0 ±2.5 ±4.0 V RL= 2 kΩ over temperature ±12.0 ±13.8 ±12.0 ±13.8 V RL= 500 kΩ3 ±12.0 ±13.5 ±12.0 ±13.5 V Positive Current Limit Output to ground short 60 100 120 60 100 120 mA Negative Current Limit Output to ground short 60 90 120 60 90 120 mA Capacitive Load 1 ≤ G ≤ 1000, 0.1 1 0.1 1 μF Stability no oscillations1 Thermal Shutdown Junction temperature 165 165 °C Temperature NOISE Voltage Density, RTI en fO = 1 kHz G = 1000 5 5 nV/√Hz G = 100 10 10 nV/√Hz G = 10 59 59 nV/√Hz G = 1 540 540 nV/√Hz Noise Current Density, RTI in fO = 1 kHz, G = 1000 0.15 0.15 pV/√Hz Input Noise Voltage en p-p 0.1 Hz to 10 Hz G = 1000 0.12 0.12 μV p-p G = 100 0.16 0.16 μV p-p G = 10 1.4 1.4 μV p-p G = 1 13 13 μV p-p Input Noise Current in p-p 0.1 Hz to 10 Hz, G = 1000 2 2 pV p-p DYNAMIC RESPONSE Small-Signal Bandwidth BW G = 1 570 570 kHz (−3 dB) G = 10 100 100 kHz G = 100 82 82 kHz G = 1000 26 26 kHz Slew Rate G = 10 3.5 4.5 3.0 4.5 V/μs Settling Time To 0.01%, 20 V step G = 1 12 12 μs G = 10 13 13 μs G = 100 15 15 μs G = 1000 50 50 μs 1 Guaranteed by design. 2 Gain temperature coefficient does not include the effects of gain and scale resistor temperature coefficient match. 3 −55°C ≤ TA ≤ +125°C for A and B grades, −25°C ≤ TA ≤ +85°C for E and F grades, 0°C ≤ TA ≤ 70°C for G grade. Rev. F | Page 7 of 29 Document Outline FEATURES GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS DICE CHARACTERISTICS WAFER TEST LIMITS (AMP01NBC) ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT AND OUTPUT OFFSET VOLTAGES INPUT BIAS AND OFFSET CURRENTS GAIN COMMON-MODE REJECTION ACTIVE GUARD DRIVE GROUNDING SENSE AND REFERENCE TERMINALS DRIVING 50 Ω LOADS HEATSINKING OVERVOLTAGE PROTECTION POWER SUPPLY CONSIDERATIONS APPLICATIONS CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
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