Datasheet K6R1016V1D (Samsung)

for AT&T K6R1016V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark
Rev. 0.0 Initial document. May. 11. 2001 Preliminary Rev. 0.1 Speed bin modify June. 18. 2001 Preliminary Rev. 0.2 Current modify September. 9. 2001 Preliminary Rev. 1.0 1. Delete 12ns speed bin. December. 18. 2001 Final 2. Change Icc for Industrial mode. Item Previous Current 8ns 100mA 90mA ICC(Industrial) 10ns 85mA 75mA Rev. 2.0 1. Add tBA,tBLZ,tBHZ,tBW AC parematers. February. 14. 2002 Final Rev. 3.0 1. Correct read cycle timing diagram(2). June. 19. 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision 3.0
- 1 -
June 2002