Datasheet 1N4150 (Vishay) - 2

1N4150
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 1 mA VF 0.540 0.620 V IF = 10 mA VF 0.660 0.740 V Forward voltage IF = 50 mA VF 0.760 0.860 V IF = 100 mA VF 0.820 0.920 V IF = 200 mA VF 0.870 1 V VR = 50 V IR 100 nA Reverse current VR = 50 V, Tj = 150 °C IR 100 μA V Diode capacitance R = 0 V, f = 1 MHz, C V D 2.5 pF HF = 50 mV I Reverse recovery time F = IR = (10 to 100) mA, iR = 0.1 x IR, RL = 100 Ω trr 4 ns
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 100 1000 Scattering Limit 10 100 Scattering Limit 1 10 - Reverse Current (µA) 0.1 1 I R - Forward Current (mA) I F V = 50 V R T = 25 °C J 0.01 0.1 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0 94 9100 TJ - Junction Temperature (°C) 94 9162 VF - Forward Voltage (V) Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35 (DO-204AH)
Cathode Identification ] ] 24] 7 0 .0 .015] 6 5 [0 .0 .0 [0 26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024] 0 0 x. [ [ a in. 7 3 1. 1. 3.1 min. [0.120] 6 m 4 m 0. 0. Ø Ø Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 06-Jul-17
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