VEMD4110X01www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNITForward voltage IF = 50 mA VF - 1.1 1.3 V Reverse dark current VR = 5 V, E = 0 Iro - 1 3 nA VR = 0 V, f = 1 MHz, E = 0 CD - 7 - pF Diode capacitance VR = 5 V, f = 1 MHz, E = 0 CD - 2.5 - pF Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik - 2.2 - μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk - 0.1 - %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 1.9 2.4 3.1 μA Angle of half sensitivity ϕ - ± 55 - ° Wavelength of peak sensitivity λp - 910 - nm Range of spectral bandwidth λ0.5 - 740 to 1040 - nm Rise time VR = 5 V, RL = 1 kΩ, λ = 820 nm tr - 100 - ns Fall time VR = 5 V, RL = 1 kΩ, λ = 820 nm tf - 100 - ns
BASIC CHARACTERISTICS(Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 1000 10000 120 10000 ) V = 5 V R (% 115 V = 5 V, λ = 950 nm ) R rrent (nA u 110 C 100 1000 1000 rrent u ght 105 Li C ne ne ne ine ine ne rk a 100 1st li 2nd li verse 1st li 2nd l 2nd l e 2nd li R 95 10 100 100 everse D R 90 - I ro - Relative l 85 ,re I ra 1 10 80 10 50 70 90 110 -40 -20 0 20 40 60 80 100 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 15-Jul-2020
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