VEMD4110X01 www.vishay.com Vishay Semiconductors Axis Title Axis Title 10 10000 100 10000 ) 90 ) V = 5 V, λ = 950 nm R (% (μA ity 80 tiv 70 1 1000 nsi rrent 1000 e u S 60 ine ne ne ine ne ne ght C 50 ectral 1st li 2nd l 2nd li p 1st li 2nd l 2nd li 40 0.1 100 100 everse Li 30 ative S R el - R 20 I ra - l.re 10 S 0.01 10 0 10 0.01 0.1 1 10 400 500 600 700 800 900 1000 1100 E - Irradiance (mW/cm2) e λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Axis Title Axis Tit 0° le 10° 20° 10 10000 10000 2 mW/cm2 λ = 950 nm 30° 1 mW/cm2 ) ent 0.5 mW/cm2 (μA 1 1000 itivity s 1000 40° 1.0 0.2 mW/cm2 ne ne ine Sen isplacem ne 0.9 tive 50° 0.1 mW/cm2 1st li ine 2nd li 2nd l 2nd li ght Current ela 0.8 0.1 100 R gular D 2nd l - 100 n 0.05 mW/cm2 60° l. A re - S φ everse Li 0.7 70° R - 80° I ra 0.01 10 10 0.01 0.1 1 0.6 0.4 0.2 0 V - Reverse Voltage (V) R 1st line Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 6 - Relative Sensitivity vs. Angular Displacement Rev. 1.1, 15-Jul-2020 3 Document Number: 84910 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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