Datasheet MMBFJ177LT1G, SMMBFJ177LT1G (ON Semiconductor)

link to page 1 MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper
P−Channel − Depletion www.onsemi.com Features
• S Prefix for Automotive and Other Applications Requiring Unique 2 SOURCE Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • 3 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS GATE Compliant 1 DRAIN
MAXIMUM RATINGS Rating Symbol Value Unit
3
SOT−23 (TO−236)
Drain−Gate Voltage V
CASE 318−08
DG −25 Vdc 1
STYLE 10
Gate−Source Voltage VGS 25 Vdc 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board P 6Y MG D 225 mW (Note 1) G TA = 25°C 1.8 mW/°C 1 Derate above 25°C Thermal Resistance, Rq 6Y = Specific Device Code JA 556 °C/W Junction−to−Ambient M = Date Code* G = Pb−Free Package Junction and Storage Temperature TJ, Tstg − 55 to +150 °C (Note: Microdot may be in either location) 1. FR− 5 = 1.0 0.75 0.062 in. *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device Package Shipping
† MMBFJ177LT1G SOT−23 3000 / Tape & (Pb−Free) Reel SMMBFJ177LT1G SOT−23 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 8 MMBFJ177LT1/D