Клеммные колодки Keen Side

Datasheet ZTX1047A (Diodes) - 3

ПроизводительDiodes
ОписаниеNPN Silicon Planar Medium Power Нigh Gain Transistor
Страниц / Страница4 / 3 — ZTX1047A. ZTX1047A. ELECTRICAL. CHARACTERISTICS. (at. Tamb. =. 25°C. …
Формат / Размер файлаPDF / 113 Кб
Язык документаанглийский

ZTX1047A. ZTX1047A. ELECTRICAL. CHARACTERISTICS. (at. Tamb. =. 25°C. unless. otherwise. stated). TYPICAL. CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP

ZTX1047A ZTX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) TYPICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP

Кремний
Россия и страны СНГ
ZTX10470ASTOA
по запросу
МосЧип
Россия
ZTX10470ASTOA
Diodes
по запросу
AllElco Electronics
Весь мир
ZTX10470ASTOA
Diodes
по запросу

Модельный ряд для этого даташита

Текстовая версия документа

ZTX1047A ZTX1047A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). TYPICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.8 Collector-Base Breakdown V(BR)CBO 35 55 V IC=100µA +25°C IC/IB=100 Voltage 0.8 0.6 Collector-Emitter VCES 35 55 V IC=100µA 0.6 IC/IB=50 Breakdown Voltage IC/IB=100 0.4 -55°C 0.4 IC/IB=300 +25°C +100°C Collector-Emitter V +175°C CEO 10 14 V IC=10mA Breakdown Voltage 0.2 0.2 Collector-Emitter VCEV 35 55 V IC=100µA, VEB=1V Breakdown Voltage 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A Emitter-Base Breakdown V(BR)EBO 5 8.7 V IE=100µA IC-Collector Current IC-Collector Current Voltage VCE(sat) v IC VCE(sat) v IC Collector Cut-Off Current ICBO 0.3 10 nA VCB=20V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V 1.4 700 VCE=2V IC/IB=100 Collector Emitter Cut-Off ICES 0.3 10 nA VCES=20V 1.2 Current 600 +100°C -55°C 1.0 +25°C 500 +25°C +100°C +175°C Collector-Emitter Saturation VCE(sat) 23 40 mV IC=0.5A, IB=10mA* 400 0.8 Voltage 44 70 mV IC=1A, IB=10mA* 120 185 mV I 300 0.6 C=3A, IB=10mA* -55°C 130 190 mV IC=4A, IB=20mA* 200 0.4 100 0.2 Base-Emitter VBE(sat) 860 950 mV IC=4A, IB=20mA* Saturation Voltage 1mA 10mA 100mA 1A 10A 100A 1mA 10mA 100mA 1A 10A 100A Base-Emitter Turn-On VBE(on) 810 900 mV IC=4A, VCE=2V* IC-Collector Current IC-Collector Current Voltage hFE v IC VBE(sat) v Ic Static Forward Current hFE 280 440 IC=10mA, VCE=2V* Transfer Ratio 300 450 1200 IC=1A, VCE=2V* 240 380 IC=4A, VCE=2V* 150 230 IC=10A, VCE=2V* 100 Single Pulse Test Tamb=25C 60 110 IC=20A, VCE=2V* 1.2 VCE=2V Transition Frequency f 1.0 -55°C T 150 MHz IC=50mA, VCE=10V +25°C +100°C f=50MHz 0.8 10 +175°C Output Capacitance C 0.6 obo 85 110 pF VCB=10V, f=1MHz DC 0.4 1 1s 100ms ton 130 ns IC=4A, IB=40mA, VCC=10V 10ms Switching Times 0.2 1ms 100us toff 180 ns IC=4A, IB=±40mA, VCC=10V 0.1 1mA 10mA 100mA 1A 10A 100A 0.1V 1V 10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка