Datasheet PN200A, MMBT200 (ON Semiconductor)

PN200 A / MMBT200 — PNP Ge PN200A / MMBT200 PNP General-Purpose Amplifier Description neral-
This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Pur p ose Am C E plif TO-92 B E B C SOT-23 ier Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method
PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-23 3L Tape and Reel
Absolute Maximum Ratings
(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current - Continuous -500 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. © 1997 Semiconductor Components Industries, LLC. Publication Order Number: PN200A/D October-2017, Rev. 2