Datasheet TW070J120B (Toshiba)
| Производитель | Toshiba |
| Описание | MOSFETs Silicon Carbide N-Channel MOS |
| Страниц / Страница | 10 / 1 — TW070J120B. MOSFETs. Silicon. Carbide. N-Channel. MOS. TW070J120B. 1. … |
| Формат / Размер файла | PDF / 518 Кб |
| Язык документа | английский |
TW070J120B. MOSFETs. Silicon. Carbide. N-Channel. MOS. TW070J120B. 1. Applications. •. Switching. Voltage. Regulators. 2. Features. (1). Chip. design. of
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TW070J120B MOSFETs Silicon Carbide N-Channel MOS TW070J120B 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 2nd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, ID = 20 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-3P(N) Start of commercial production 2020-08 ©2020 1 2020-08-05 Toshiba Electronic Devices & Storage Corporation Rev.2.0
