S i942 January 2001 4 DYSi9424DY Single P-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeatures This P-Channel 2.5V specified MOSFET is produced • -8.0 A, -20 V. R = 0.024 Ω @ V = -4.5 V using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored R = 0.032 Ω @ V = -2.5 V. DS(on) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely low R . DS(ON) Applications • High power and current handling capability. • DC/DC converter • Load switch • Battery Protection DD 5 4 DD 6 3 7 2 GSS 8 1 SO-8SAbsolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±10 V ID Drain Current - Continuous (Note 1a) -8.0 A - Pulsed -50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering InformationDevice Marking Device Reel Size Tape Width Quantity 9424 Si9424DY 13’’ 12mm 2500 units 2001 Fairchild Semiconductor International Si9424DY Rev.A
