Datasheet SI9424DY (Fairchild) - 4

S i9 424 Typical Characteristics
(continued)
DY
5 3500 f= 1 MHz
(V)
ID= -8.0A 3000 VGS= 0V
GE
4 VDS= -5V
A T L
-10V
pF)
2500
(
C -15V iss 3
E VO
2000
C ANCE R U CIT
1500 2
AA E-SO T
1000
CAP
1
, GA
C
GS
500 oss
-V
Crss 0 0 0 5 10 15 20 25 0 4 8 12 16 20
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50 R 100µs DS(ON) LIMIT SINGLE PULSE o RθJA=125 C/W
)
10ms 40 o
A
10 TA=25 C 100ms
NT (
1s 30 10s 1 DC 20
POWER (W)
VGS= -4.5V
, DRAIN CURRE D
0.1
-I
SINGLE PULSE 10 o RθJA= 125 C/W o TA= 25 C 0 0.01 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100
SINGLE PULSE TIME (SEC) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1
CE
0.5 D = 0.5
E AN T
R (t) = r(t) * R
IV
0.2 0.2 θJA θJA
IS CT S
R = 125°C/W θJA
E E
0.1 0.1
F R L EF
0.05
A
0.05
D M
P(pk)
E R
0.02
IZ E
0.02
H AL
0.01 t
T
1 0.01 t 2
RM
Single Pulse
NT O IE
0.005 T - T = P * R (t) J A θJA
r(t), N
Duty Cycle, D = t /t 1 2
RANS
0.002
T
0.001 0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. Si9424DY Rev.A